We measured at room temperature the photoluminescence spectra of the thermally oxidized Si 1ϪxϪy Ge x C y thin films which were grown on silicon substrates by plasma-enhanced chemical vapor deposition and then wet oxidized at 1100°C for 20 min. The photoluminescence band with a peak at ϳ393 nm under the exciting radiation of ϭ241 nm was observed. Possible mechanism of this photoluminescence is discussed.
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