Thispaper presents the development of a three-stage 155-GHz monolithic low noise amplifier (LNA) using 0.1 -pm pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology.This amplifier exhibits a measured small signal gain of 12 dB at 153-155 GHz, and more than 10-dB gain from 15 1 to 156 GHz. This is the highest frequency amplifier ever reported using three terminal devices.
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