Millisecond kinetics of photo-darkening/bleaching in xGe45Se55-(1−x)As45Se55 chalcogenide amorphous films J. Appl. Phys. 112, 053105 (2012) Analysis of sub-stoichiometric hydrogenated silicon oxide films for surface passivation of crystalline silicon solar cells J. Appl. Phys. 112, 054905 (2012) Phase evolution and room-temperature photoluminescence in amorphous SiC alloy J. Appl. Phys. 111, 103526 (2012) Resistive switching properties of amorphous Pr0.7Ca0.3MnO3 films grown on indium tin oxide/glass substrate using pulsed laser deposition method Silica glass with dispersed colloid Au particles was synthesized by ion implantation. Colloid Au particles were found to grow through an Ostwald ripening mechanism controlled by diffusion in the silica glass. The third-order nonlinear optical susceptibility xc3) of this glass was found to be proportional to the fourth power of the radius of the colloid particles or the fourth power of the absorption coefficient at the peak of a plasmon band when the total volume of the colloid particles was constant. Furthermore, x (3) of the glass was inversely proportional to the third power of the total volume of colloid particles when the absorption coefficient of the plasmon band was constant.

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The absolute concentration of oxygen in polycrystalline InN was measured using a combination of Rutherford backscattering and x-ray photoemission spectroscopy. Polycrystalline InN was grown on quartz and glassy carbon at 500 °C by molecular-beam epitaxy using In metal and activated nitrogen species generated in rf plasma. The optical bandgap of polycrystalline InN increased from 1.55 to 2.27 eV with increasing oxygen concentration from 1% to 6%. Polycrystalline InN with an optical bandgap of 1.9 eV, which has often been reported, contains oxygen of a molar fraction of 3%.

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