We concluded that the use of argon laser at low energy density (10.74 J/cm(2)) significantly increases the fluoride retention in lased enamel which had approximately three times more fluoride than the unlased enamel.

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The use of argon laser at low energy density (10.74 J/cm2) significantly increased the fluoride retention in lased enamel that had approximately 400 times more fluoride than the unlased enamel. We consider this procedure as an alternative clinical procedure to increase the fluoride content of enamel surface.

The reaction of Co with epitaxial SiGeC/Si layers is investigated and compared to the reaction of Co with SiGe/Si layers. The sequence of phase formation is the same as the reaction of Co with monocrystalline Si, however, cobalt disilicide is formed at much higher temperatures. The presence of C further delays the disilicide formation, as a result of C accumulation at the silicide/substrate interface during the reaction, which blocks the Co diffusion paths. The CoSi 2 layers thus formed exhibit a preferential ͑h00͒ orientation. The slow supply of Co atoms to the silicide/Si interface, due to the blocking of Co diffusion paths by Ge and C, is believed to be the reason for this epitaxial alignment.

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