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Integration schemes of bulk FinFET SRAM cell with bulk planar FET peripheral circuit are studied for the first time. Two types of SRAM cells with different β-ratio were fabricated and investigated in the view of static noise margin (SNM). High SNM of 122 mV is obtained in the cell with 15 nm Fin width, 90 nm channel height and 20 nm gate length at V dd = 0.6 V. This is the smallest gate length FinFET SRAM reported to date.A higher beta ratio (β > 2.0) in FinFET SRAM cell will be also achieved by tuning the effective channel width of each FinFETs without area penalty by taking advantage of bulk-Si substrate.

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