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In this paper, the oxygen sensitivity of gallium oxide thin films and single crystals at high temperatures is presented. To investigate the oxygen sensing mechanism at high temperature, we used sputtered β-Ga2O3 thin films and β-Ga2O3 single crystals with different electrode geometries. For β-Ga2O3 single crystals: a response time of about 10 s was achieved, while for β-Ga2O3 thin-film this was about 11 s. For single crystal samples the response time does not depend on the type of electrode. This can be explained by the combination of a greater influence of surface effects and smaller influence of bulk effects.

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