An accurate IGBT model is presented in this paper. It is based on the IGBT physical structure. The model uses an equivalent circuit which combines a MOSFET, controlled by a voltage-controlled voltage source, in series with a diode. the required parameters can be extracted with a simple procedure from the datasheet dc characteristics given by the manufacturers. The results of the comparison between the simulation and the datasheet information shows an average error less than 9% for the output characteristics and less than 7% for the transfer characteristic. Moreover, the model is simple and can be implemented in any SPICE-based circuit simulator. A description of the model and the parameter extraction procedure will be provided along.

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