Changes in the number and proportion of osteopontin mRNA (Opn) expressing osteocytes and osteoclasts caused by the mechanical stress applied during experimental tooth movement were examined in the present study. Opn expression was detected in the osteocytes on the pressure side at the early stage, and gradually spread to those on the tension side and also to the osteoblasts and bone-lining cells in the alveolar bone. Only 3.3% of the osteocytes located on the pressure side expressed Opn in the interradicular septum of control rats; in contrast, the value was increased to 87.5% at 48 h after the initiation of tooth movement. These results indicate that these cells responded to mechanical stress loaded on the bone with expression of the osteopontin gene.
A hydrothermal method for preparing thin films of crystalline PZT was developed by controlling the rates of nucleation and crystal growth. This method consisted of two steps of hydrothermal reaction. The first step (nucleation process) was that in which the TiO2 substrate reacted with the mixed solution of Pb and Zr to form PZT and/or PZ nuclei on the surface. Subsequently, the crystal growth of PZT was promoted as the next hydrothermal step (crystal growth process) by the reaction of the mixed solution of Pb, Zr and Ti. From the experimental results of PZT powder preparation, the conditions of the nucleation and crystal growth process were determined as at 150°C for 24 h and at 120°C for 48 h, respectively. It was verified that the thin films consisted of PZT polycrystals and showed ferroelectric properties.
We demonstrate room temperature pulsed operation of nitride based multi-quantum-well (MQW) laser diodes with cleaved mirror facets grown on a conventional C-face sapphire substrate. Cleavage was performed along the <11*BAR*2*BAR*0> direction of the sapphire substrate, and the resultant facet was analyzed using an atomic force microscope (AFM) and theoretical calculation. A single peak emisson, at a wavelength of 417.5 nm, with a full width at half-maximum of 0.15 nm, was obtained. The threshold current density of the laser was 50 kA/cm2 and a voltage for the threshold current was 20 V.
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