Abstract:We explored whether the combination of anti-oxidant and anti-inflammatory guava (Psidium guajava) and trehalose treatment protects the kidney and pancreas against Type II diabetes (T2DM)-induced injury in rats. We measured the active component of guava juice by HPLC analysis. T2DM was induced in Wistar rats by intraperitoneal administration of nicotinamide and streptozotocin and combination with high fructose diets for 8 weeks. The rats fed with different dosages of guava juice in combination with or without trehalose for 4 weeks were evaluated the parameters including OGTT, plasma insulin, HbA1c, HOMA-IR (insulin resistance) and HOMA-β (β cell function and insulin secretion). We measured oxidative and inflammatory degrees by immunohistochemistry stain, fluorescent stain, and western blot and serum and kidney reactive oxygen species (ROS) by a chemiluminescence analyzer. High content of quercetin in the guava juice scavenged H 2 O 2 and HOCl, whereas trehalose selectively reduced H 2 O 2 , not HOCl. T2DM affected the levels in OGTT, plasma insulin, HbA1c, HOMA-IR and HOMA-β, whereas these T2DM-altered parameters, except HbA1c, were significantly improved by guava and trehalose treatment. The levels of T2DM-enhanced renal ROS, 4-hydroxynonenal, caspase-3/apoptosis, LC3-B/autophagy and IL-1β/pyroptosis were significantly decreased by guava juice and trehalose. The combination with trehalose and guava juice protects the pancreas and kidney against T2DM-induced injury.

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Micron-sized patterned sapphire substrates (PSSs) with an ex situ sputtered AlN nucleation layer (NL) have been used to improve the performance of GaN-based light-emitting diodes (LEDs). The growth of GaN was enhanced not only from bottom c-plane, but also from the sidewall of the micron-sized patterns. In this study, KOH solution was used to etch AlN (especially sidewall AlN) for the first time. The additional etching process is very simple. It was found that KOH etching 1 min did enhance the light output power (LOP) of LED. However, with the increase of etching time to 4 min, the LOP decreased. Besides, the effect of remained AlN on GaN growth mechanism was investigated in detail.