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Oxide heterojunction solar cells composed of an n-type Al-doped ZnO (AZO) thin film on the surfaces of p-type Cu 2 O films were fabricated. The Cu 2 O films of about 0.34 to 1.67 m thickness were grown by partial oxidation of a Cu sheet using microwave plasma. The AZO film of 400 nm thickness was deposited by magnetron sputtering. Energy conversion efficiencies of 0.12 to 0.30% were obtained in AZO/Cu 2 O cells under AM1.5 solar illumination. #