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A wide locking range nMOS divide-by-2 RLC injection-locked frequency divider (ILFD) was designed and implemented in the TSMC 0.18-μm BiCMOS process. The ILFD is based on a cross-coupled oscillator with one direct injection MOSFET and a RLC resonator. The RLC resonator is used to extend the locking range so that dual-band locking ranges can be merged in one locking range at both low and high injection powers. At the drain-source bias of 0.9 V for switching transistors, and at the incident power of 0 dBm the locking range of the divide-by-2 ILFD is 7.24 GHz, from the incident frequency 2.65 to 9.89 GHz, the locking range percentage is 115.47%. The power consumption of ILFD core is 8.685 mW. The die area is 0.726 × 0.930 mm 2 .

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