A self-driven all-oxide β-Ga 2 O 3 /α-MoO 3 heterojunction solar-blind ultraviolet (UV) photodetector is introduced in this work. The photodetector shows photo responsivity (R) of 0.59 mA W −1 , specific detectivity (D * ) of 10 11 Jones and linear dynamic region (LDR) of 162.9 dB at 10 V, and R of 0.26 mA W −1 , D * of 4 ´10 10 Jones and LDR of 89.44 dB at −10 V. In addition, it could also operate repeatably and stably at zero bias, illustrating that it is a self-driven photodetector. In one word, the fabricated β-Ga 2 O 3 /α-MoO 3 heterojunction has a potential to work as a self-driven solar-blind UV sensing device.

Abstract:The post cleaning method for clean the shadow mask using in OLED (organic light emitting diode) emitter layer is always reforming. The cleaning solution and analysis method of shadow mask is still lack and not optimized. We use the simple and useful analytical method to determine the quantity and quality of organic and inorganic residue on surface of shadow mask. Finally analyze the cleaning solution using Raman spectroscopy efficiently. OLED증착시 사용되는 발광물질로는 DCJTB(4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran), 6) Alq 3 , 7) DSB(1,4-distyrylbenzene) deriva-

We determined that the use of densification, sacrificial oxidation, gate oxidation and source/drain implantation has the capability to reduce the dislocation. A dislocation-free process is proposed, and its mechanism presented in embedded flash memory. The dislocation decreased when n-type ions were implanted at a low energy level for source and drain. A dry oxidation process using only oxygen without hydrogen and oxidation for logic gates led to the formation of a sacrificial oxide on the rapid thermal oxidation (RTP) methods without densification after gap-filling as reducing dislocation processes. These methods dramatically reduced the standby leakage current.