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A production technology of nuclear radiation detectors based on αSi-Si(Li) heterostructures is considered. It is shown that these detectors are more efficient as compared to traditional p-n structures due to a thin near surface ("dead") layer. (a) (b) 3 2 1 4 3 2 1 Fig. 1. Design of the αSi-Si(Li) based detector: (a) detector, view from above; (b) general appearance of the detector; (1) single crystal silicon, compensated by the lithium ion drift method; (2) amorphous layer; (3) aluminum contact; and (4) gold contact.

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