N-doped and In-N-codoped ZnO films were fabricated on quartz glass substrate by sol-gel spin coating. Their p-type conductivities were characterized by the Hall measurements, revealing low resistivities of the order of 10−1Ωcm. Thin-film junctions comprising an undoped ZnO layer and a N-doped ZnO layer displayed the typical rectifying characteristics, suggesting formation of p-n homojunctions at the interfaces.

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The percolative ceramic composites of Ba0.75Sr0.25TiO3∕Ag (BST/Ag) with dense microstructure were sintered at a low temperature of 960°C. Excellent dielectric properties, such as high dielectric constant (εr∼24000), low dielectric loss, and high dielectric tunability, were reported. The dielectric constant is found to be nearly temperature and frequency independent. It is essential to introduce the low-melting-point metal of silver into BST ceramics for significantly enhancing the dielectric properties of the composites. The superproperties make it potential to be used for electronic devices such as high charge-storage capacitors and tunable filters.