Conventional field-effect transistors (FETs) are not expected to satisfy the requirements of future large integrated nanoelectronic circuits because of these circuits' ultra-high power dissipation and because the conventional FETs cannot overcome the subthreshold swing (SS) limit of 60 mV/decade. In this work, the ordinary oxide of the FET is replaced only by a ferroelectric (Fe) polymer, poly(vinylidene difluoride-trifluoroethylene) (P(VDF-TrFE)). Additionally, we employ a two-dimensional (2D) semiconductor, such as MoS 2 and MoSe 2 , as the channel. This 2D Fe-FET achieves an ultralow SS of 24.2 mV/dec over four orders of magnitude in drain current at room temperature; this sub-60 mV/dec switching is derived from the Fe negative capacitance (NC) effect during the polarization of ferroelectric domain switching. Such 2D NC-FETs, realized by integrating of 2D semiconductors and organic ferroelectrics, provide a new approach to satisfy the requirements of next-generation low-energy-consumption integrated nanoelectronic circuits as well as the requirements of future flexible electronics.

Pitcher plant-bioinspired bubble slippery surface fabricated by femtosecond laser for buoyancy-driven bubble self-transport and efficient gas capture.

We demonstrate a novel all-fiber-optic humidity sensor comprised of a WS₂ film overlay on a side polished fiber (SPF). This sensor can achieve optical power variation of up to 6 dB in a relative humidity (RH) range of 35%-85%. In particular, this novel humidity fiber sensor has a linear correlation coefficient of 99.39%, sensitivity of 0.1213 dB/%RH, and a humidity resolution of 0.475%RH. Furthermore, this sensor shows good repeatability and reversibility, and fast response to breath stimulus. This WS₂ based all-fiber optic humidity sensor is easy to fabricate, is compatible with pre-established fiber optic systems, and holds great potential in photonics applications such as in all-fiber optic humidity sensing networks.

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