TFT backplane process for AM‐OLED was developed by integrating a G8 compatible CW green laser annealing into conventional bottom‐gate TFT process. Novel coating channel‐etching‐stopper (CES) and contact doping processes achieved the same high TFT performance as LTPS without critically increasing extra process steps.

Electrical characteristics of SiO2 are degraded due to reactive ion etching (RIE) radiation damage. We prepared metal-oxide-semiconductor (MOS) diode samples with plasma-exposed SiO2 film. Degradation of MOS diode characteristics was examined under several plasma conditions. Initial C-V measurement and B-T aging test show the RF power dependence of the radiation damage. The V th shift increases with RF power. The V th shift depends not on the plasma exposure time, but on the residual oxide thickness after plasma exposure. According to I-V measurement, trapped negative charge density increases with increasing RF power. The depth of the trapped charge centroid is proportional to V dc 1/2. Neutral and charged traps are generated in SiO2 due to ion bombardment.

The tiny bubbles with diameters less than 1 µm are called ultrafine bubbles (UFB). And the application of UFB in agriculture, fishery and environment is highly anticipated. In this study, the changes in the properties of oxygen, 5% hydrogen (95% nitrogen), and nitrogen UFBs were investigated with droplet formation. The UFB water was ejected through the orifice nozzle (diameter: 280m) and formed tiny droplets. Particularly in the case of oxygen UFB, a change in the distribution of the bubble size was observed. We observed higher microbubble concentration and smaller bubble size below 50m in the sprayed UFB water compared with in the control distilled water. The distribution of oxygen UFB itself changed before and after spraying, and its diameter tended to be larger. In addition, its water contained more MB, which resulted in a higher cleaning effect.

s h i h i r o Todokoro, Member Kyoto Research L a b o r a t o r y , M a t s u s h i t a E l e c t r o n i c s C o r p o r a t i o n , Kyoto, Japan 601