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YAG laser assisted etching techniques were developed and investigated for releasing silicon micro structures. HC1,SF6 etc., which produce volatile exhaust, were used as etching gas at atmospheric pressure. The YAG laser assisted etching w a s a p p l i e d t o f a b r i c a t e a n electrostatic m i c r o a c t u a t o r , a r e s o n a t i n g s e n s o r a n d a ccelerometers. This resistless dry etching can be applied to threedimensional structures.