No abstract

In this study, a new nonvolatile memory with magnetic nano-dots (MNDs) was proposed. A relatively large anisotropic change of gate current–voltage characteristics by the magnetization in magnetic non-volatile memory with Co nano floating gate and Ni-Fe control gate was obtained. A Co magnetic nano-dot film with very high dot density of 2×1013 cm-2 was successfully formed by sputtering with optimized target composition. A small anisotropic change of gate current–voltage characteristics by the magnetization in MND memory with Co MNDs and Ni-Fe control gate was observed.

Fabrication and local laser heating of freestanding Ni80Fe20 bridges with Pt contacts displaying anisotropic magnetoresistance and anomalous Nernst effect Appl. Phys. Lett. 104, 172401 (2014); 10.1063/1.4874302Direct-write patterning of microstructured porous silicon arrays by focused-ion-beam Pt deposition and metalassisted electroless etching A highly selective dry-etch process for conductive metals ͑Au, Pt, and Cu͒ and magnetic metal ͑20% Fe-Ni͒ has been developed using a magnetron reactive-ion-etching system employing a CO/NH 3 /Xe chemistry. Etch selectivities of these metals to titanium are greater than 80:1 for Au, 40:1 for Pt, 30:1 for Cu, and 15:1 for permalloy ͑20% Fe-Ni͒ at the titanium-etch rate of 1.0 nm/min. The etching was conducted at room temperature. It was observed that the small addition of Xe to CO/NH 3 etch gases (molar ratioϭ1/7) increased the etch rate of these metals while promoting nitridation of the titanium mask and achieving enhanced selectivity. The titanium can be used both as a mask for the sputter etching of noble metals and as a mask for the reactive-ion etching of magnetic metals in the plasma. By about a factor of 3, the inclusion of Xe enhanced the etch selectivities for noble metals, copper, and a magnetic metal over titanium.

No abstract