Sox9 is a direct transcriptional activator of cartilage-specific extracellular matrix genes and has essential roles in chondrogenesis. Mutations in or around the SOX9 gene cause campomelic dysplasia or Pierre Robin Sequence. However, Sox9-dependent transcriptional control in chondrogenesis remains largely unknown. Here we identify Wwp2 as a direct target of Sox9. Wwp2 interacts physically with Sox9 and is associated with Sox9 transcriptional activity via its nuclear translocation. A yeast two-hybrid screen using a cDNA library reveals that Wwp2 interacts with Med25, a component of the Mediator complex. The positive regulation of Sox9 transcriptional activity by Wwp2 is mediated by the binding between Sox9 and Med25. In zebrafish, morpholino-mediated knockdown of either wwp2 or med25 induces palatal malformation, which is comparable to that in sox9 mutants. These results provide evidence that the regulatory interaction between Sox9, Wwp2 and Med25 defines the Sox9 transcriptional mechanisms of chondrogenesis in the forming palate.
The enhancing rim fraction score, a quantitative DCE MR imaging lncRNA radiogenomic biomarker, is associated with early metastasis and expression of the known predictor of metastatic progression, HOTAIR.
The reduction effect of various carboxylic acids on inkjet-printed copper film was investigated. Carboxylic acids were exposed to the film by nitrogen gas that was bubbled through the liquid acids during the annealing process. It was observed that in the case of saturated monocarboxylic acid (formic, acetic, propionic, butyric), the acids with shorter hydrocarbon chains perform better in reducing the surface copper oxides in the printed copper conductive film. The printed films exposed to formic acid vapor exhibited the lowest resistivity (3.10 and 2.30 μΩ cm when annealed at 200 and 250 °C, respectively). In addition, the oxalic acid more effectively reduces copper oxide than formic acid and its usage can shorten the annealing time for highly conductive printed copper film. This reductive annealing process allows fabrication of copper patterns with low resistivity, (3.82 μΩ cm annealed at 250 °C) comparable to the resistivity of bulk copper.
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