A procedure is described for doping PbI 2 single crystals with Fe and Ni during vapor-phase growth in a closed system in the presence of excess iodine. The rate of mass transport in the system and the doping level of the crystals are shown to be governed by the dopant content in the source material and the source temperature. The effect of Fe and Ni doping on the low-temperature (5 K) exciton photoluminescence spectrum of PbI 2 is discussed.
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