For the first time in a single experiment the magnetophonon resonances of three types of carriers in p-InSb are investigated: light holes (MPR'), heavy holes (MPRh), and electrons (MPRe). From the temperature shift of the ground series (most intensive ones) of MPR' and MPRh the valence-band parameters of the band structure as function of temperature are calculated. The investigation completed allows for the first time to identify nonearlier observed two-phonon transitions in p-InSb, alongside with an additional series of peculiarities: a satellite of the main MPRh series peaks at weak magnetic fields. The comparison of MPRh of two samples with different mobilities of heavy holes lead to the observance of a distortion in the period of the transverse field of the main MPRh series in the sample of less mobility of heavy holes.Erstmalig werden in einem Experiment die Magnetophononresonanz an drei Arten von Ladungstragern in p-InSb untersucht: leichte Locher (MPR'), schwere Locher (MPRh) und Elektronen (MPRe). Aus der Temperaturverschiebung der Grundzustandsserien (die intensivste) von MPR' und MPRh werden die Valenzparameter der Bandstruktur als Funktion der Temperatur berechnet. Die vollstandige Untersuchung erlaubt erstmalig die Identifizierung der friiher nicht beobachteten Zwei-Phasenubergange in p-InSb zusammen mit einer zusatzlichen Reihe von Besonderheiten wie ein Satellit der MPRh-Hauptserienmaxima bei schwachen Magnetfeldern. Der Vergleich der MPRh zweier Proben mit unterschiedlicher Beweglichkeit der schweren Locher fiihrt zu einer Storung der Periode des transversalen Feldes der Haupt-MPRh-Serie in der Probe mit der geringeren Beweglichkeit der schweren Locher.
Changes in the electrophysical and photoelectrical properties of epitaxial films of Hg1−xCdxTe (x ≈ 0.2) due to laser annealing are studied. Experimental fits for the dependence of the resistance of the film to the energy density of the laser pulse, to the time, as well as to the temperature are obtained before and after laser annealing. Further, changes in the lifetime of minority nonequilibrium carriers of charge and the spectral dependence of the photoconductivity because of laser annealing are shown. Experimental results are interpreted on the basis of the two cluster model for electro- and photoconductivity.
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