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In this work, the evolution of the excess conductivity of the YВа 2 Сu 3 О 7−δ single crystals under electron irradiation is studied. It is shown that irradiation with electrons leads to a significant expansion of the temperature interval that excess conductivity exists. Therefore, the value of the transverse coherence length ξ с (0) increases by a factor of 1.4 and the point of the 2D-3D crossover shifts with respect to the temperature.

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The effect of irradiation with high-energy electrons on the transverse electrical resistivity of YBa2Cu3O7–δ single crystals with a high degree of perfection that are optimally doped with oxygen is considered. This irradiation creates macroscopic regions oriented along the layers in the sample, which are characterized by oxygen deficiency, leading to variable-range hopping transverse conductivity. An increase in the dose of irradiation leads to a decrease in the region of localization of charge carriers.

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