Atomic force microscope oxidation on Zn creating amorphous ZnO (a-ZnO) with the a-ZnO showing multiple colors under white light at different oxidation voltages was successfully demonstrated. Simulation of reflected colors at different thicknesses of a-ZnO was also conducted. The presented technique can not only be applied to near diffraction limit multilevel optical data storage, but also makes it possible to represent the color spectra observed in nature at near diffraction limits. It can also be used for device fabrication in situations exploiting the semiconductor nature of ZnO.
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