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Two-dimensional transition-metal chalcogenide has become one of the most promising materials for miniaturization beyond Moore’s law due to its atomic-level thickness and excellent semiconductor properties. The inverter is the most basic logic gate circuit. Using double-temperature zone chemical vapor deposition and oxygen plasma doping technique, we obtained n-type and p-type MoS2 materials and designed an MoS2 CMOS inverter, showing excellent electrical performance. Under the condition of V dd = 5 V, the peak voltage gain of the inverter is 7.48, the maximum static power consumption is 37.7 nW, the noise margin low is 0.45V dd, the noise margin high is 0.32V dd, and the inverter exhibits better V in–V out signal matching. After a 42 day duration in an air environment at room temperature, the V out of the inverter was reduced by only 3.75% in the case of a high level of output voltage, and the low level of output voltage is basically unchanged.

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Monolayer MoS2 possesses good electron mobility, structural flexibility and a direct band gap, enabling it to be a promising candidate for flexible and wearable optoelectronic devices. In this article, the lateral monolayer MoS2 homojunctions were prepared by a nitrogen plasma selective doping technique. The monolayer MoS2 thin films were synthesized by chemical vapor deposition and characterized by photoluminescence, atom force microscope and Raman spectroscopy. The electronic and photoelectric properties of the lateral pn and npn homojunctions were discussed. The results showed that the rectifying ratio of the pn homojunction diode is ∼103. As a photodetector of pn homojunction, the optical responsivity is up to 48.5 A W−1, the external quantum efficiency is 11 301%, the detectivity is ∼109 Jones and the response time is 20 ms with the laser of 532 nm and the reverse bias voltage of 10 V. As a bipolar junction transistor of npn homojunction, the amplification coefficient reached ∼102. A controllable plasma doping technique, compatible with traditional CMOS process, is utilized to realize the monolayer MoS2 based pn and npn homojunctions, and it propels the potential applications of 2D materials in the electronic, optoelectronic devices and circuits.

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