We investigate the electrical spin injection and detection in In 0.53 Ga 0.47 As nanomembranes, which are originally grown on InP substrates and subsequently heterogeneously integrated on SiO 2 /Si substrates via a transfer printing technique. Through local and nonlocal spin valve measurements employing the In 0.53 Ga 0.47 As nanomembrane channels on SiO 2 /Si substrates, we successfully observe the electrical detection of spin injection from Ni 81 Fe 19 ferromagnetic metal electrodes into the channels. Furthermore, nonlocal spin valve signals are detected up to T = 300 K without mixing with anisotropic magnetoresistance, which is evidently verified by observing a memory effect.

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