Two novel conjugated polymers incorporating quinoidal thiophene are successfully synthesized. By combining 1D nuclear magnetic resonance (NMR) and 2D nuclear Overhauser effect spectroscopy analyses, the isomeric form of the major quinoid monomer is clearly identified as the asymmetric Z, E-configuration. The quinoidal polymers are synthesized via Stille polymerization with thiophene or bithiophene. Both quinoidal polymers exhibit the low band gap of 1.45 eV and amphoteric redox behavior, indicating extended conjugation owing to the quinoidal backbone. These quinoidal polymers show ambipolar behaviors with high charge carrier mobilities when applied in organic field-effect transistors. In addition, the radial alignment of polymer chains achieved by off-center spin-coating leads to further improvement of device performance, with poly(quinoidal thiophene-bithiophene) exhibiting a high hole mobility of 8.09 cm V s , which is the highest value among the quinoidal polymers up to now. Microstructural alteration via thermal annealing or off-center spin-coating is found to beneficially affect charge transport. The enhancement of crystallinity with strong π-π interactions and the nanofibrillar structure arising from planar well-delocalized quinoid units is considered to be responsible for the high charge carrier mobility.

Since quinoidal molecules have double-bond linkages between aromatic rings, they have many advantages for efficient charge transport resulting from high planarity and extended π-conjugation length. However, they unavoidably generate some isomers, which cause difficulty in purification and characterization. In this study, sulfur–oxygen conformation locking and steric repulsion approach is introduced to manipulate syn- and anti-isomerization of a quinoidal building block (bis-QEDOT). As a result, isomer-free bis-QEDOT is synthesized by introducing the 3,4-ethylenedioxy group, and the geometrical structure of bis-QEDOT is identified by thin-layer chromatography, 1H NMR, and density functional theory calculation. Furthermore, thiophene (T), bithiophene (2T), and thienylene vinylene (TV) as π-conjugated building blocks are polymerized with bis-QEDOT. Due to the quinoid structure, PQEDOT-T, PQEDOT-2T, and PQEDOT-TV show an intensified near-IR absorption and a low band gap around ∼1.16 eV. Grazing incidence wide-angle X-ray diffraction reveals that three quinoidal polymers show in the (h00) diffraction peaks up to third order after thermal annealing at 250 °C, demonstrating high crystallinity of the films. Finally, the electrical properties of the three polymers are investigated as an active layer in organic field-effect transistors showing hole mobilities of 4.3 × 10–2 (PQEDOT-T), 1.8 × 10–2 (PQEDOT-2T), and 7.8 × 10–3 cm2 V–1 s–1 (PQEDOT-TV).

We report on the fabrication of an organic thin-film semiconductor formed using a blend solution of soluble ambipolar small molecules and an insulating polymer binder that exhibits vertical phase separation and uniform film formation. The semiconductor thin films are produced in a single step from a mixture containing a small molecular semiconductor, namely, quinoidal biselenophene (QBS), and a binder polymer, namely, poly(2-vinylnaphthalene) (PVN). Organic field-effect transistors (OFETs) based on QBS/PVN blend semiconductor are then assembled using top-gate/bottom-contact device configuration, which achieve almost four times higher mobility than the neat QBS semiconductor. Depth profile via secondary ion mass spectrometry and atomic force microscopy images indicate that the QBS domains in the films made from the blend are evenly distributed with a smooth morphology at the bottom of the PVN layer. Bias stress test and variable-temperature measurements on QBS-based OFETs reveal that the QBS/PVN blend semiconductor remarkably reduces the number of trap sites at the gate dielectric/semiconductor interface and the activation energy in the transistor channel. This work provides a one-step solution processing technique, which makes use of soluble ambipolar small molecules to form a thin-film semiconductor for application in high-performance OFETs.

A quinoidal polymer,PQuBTV, with high planarity and extended π-electron delocalization was synthesized by short synthetic steps. The polymerPQuBTVshowed balanced ambipolar and high charge carrier mobilities.