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In this work nanostructuring of SOI layers with tenth nanometer thickness was made at last stage of electronic biochip producing using fluorine gas-plasma content etching. Electrical characterization verities that used fabrication approach produces high-quality devices operating up to temperatures close to liquid helium. The sensitivity of SOI NWs to negative ions Cl- in aqua solution (pH 6) was shown to be as high as 10 femtoMoles. The sensitivity of SOI NWs to negative protein BSA molecules in pH 7.4 buffer solution was shown to be as high as 1 femtoMoles.

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