Yuta Inagaki scite author profile

Photoemission properties of negative electron affinity (NEA)-GaAs(100) surface have been investigated in this work by repetitive sequence of the thermal pretreatment process and the NEA activation process with a combination of several temperature conditions and subsequent Cs and O2 supply procedures. After the specific thermal pretreatment cycles, the maximum quantum efficiency value increased, and two kinds of Cs-related adsorption structures were found. One of them enhances photoemission efficiency compared to an ordinary NEA activation process. The present results have established a remarkable improvement of photoemission.

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Yuta Inagaki

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Contribution of Treatment Temperature on Quantum Efficiency of Negative Electron Affinity (NEA)-GaAs

Study on surface processes and photoemission properties of NEA-GaAs after repetitive sequence of thermal pretreatment and NEA activation

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