The effective work function (Φm,eff) of TaN on HfO2 after postmetallization annealing (PMA) was investigated using TaN∕HfO2∕SiO2∕Si as a sample structure. We found that Φm,eff on HfO2 is stable at PMA temperatures of less than 600°C and is 4.6eV, which is approximately 0.2eV higher than that on SiO2. In contrast, Φm,eff is modulated by PMA at temperatures greater than 750°C. An analysis by x-ray photoelectron spectroscopy suggests that the increased Φm,eff is strongly related to Ta oxide formation near the TaN∕HfO2 interface. The modulation of Φm,eff on HfO2 is discussed on the basis of intrinsic and extrinsic Fermi level pinning due to Ta–O bond formation at the TaN∕HfO2 interface.

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Endoscopic removal of a lumen-apposing metal stent that migrated into the walled-off necrosis during the first drainage procedure A 43-year-old man with severe alcoholic acute pancreatitis complicated by infected walled-off necrosis (WON) (▶ Fig. 1) was referred to our hospital. An endoscopic ultrasound (EUS)-guided transluminal drainage was performed using a GF-UCT260 echoendoscope (Olympus Medical Systems, Tokyo, Japan) and a 15-mm lumen-apposing metal stent (LAMS; Hot AXIOS; Boston Scientific, Marlborough, Massachusetts, USA) was ▶ Fig. 2 Fluoroscopic images showing: a a 15-mm lumen-apposing metal stent (LAMS) that had migrated into the walled-off necrosis (WON) during the first drainage session; b the migrated LAMS being moved deeper into the WON using a balloon catheter (white arrow); c an additional 20-mm LAMS being inserted along the same guidewire under fluoroscopic guidance.

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