Solar cells based on organometal halide perovskites have seen rapidly increasing efficiencies, now exceeding 15%. Despite this progress, there is still limited knowledge on the fundamental photophysics. Here we use microwave photoconductance and photoluminescence measurements to investigate the temperature dependence of the carrier generation, mobility, and recombination in (CH3NH3)PbI3. At temperatures maintaining the tetragonal crystal phase of the perovskite, we find an exciton binding energy of about 32 meV, leading to a temperature-dependent yield of highly mobile (6.2 cm(2)/(V s) at 300 K) charge carriers. At higher laser intensities, second-order recombination with a rate constant of γ = 13 × 10(-10) cm(3) s(-1) becomes apparent. Reducing the temperature results in increasing charge carrier mobilities following a T(-1.6) dependence, which we attribute to a reduction in phonon scattering (Σμ = 16 cm(2)/(V s) at 165 K). Despite the fact that Σμ increases, γ diminishes with a factor six, implying that charge recombination in (CH3NH3)PbI3 is temperature activated. The results underline the importance of the perovskite crystal structure, the exciton binding energy, and the activation energy for recombination as key factors in optimizing new perovskite materials.

A light-induced photoluminescence (PL) enhancement in surface-deposited methylammonium lead iodide (CH3NH3PbI3) perovskites was investigated in detail using time-resolved luminescence microscopy. We found the PL intensity to increase up to three orders of magnitude upon light illumination with an excitation power density of 0.01-1 W cm(-2). The PL enhancement is accompanied by an increase of the PL lifetime from several nanoseconds to several hundred nanoseconds and also by an increase of the initial amplitude of the PL decay. The latter suggests excited state quenching at the subpicosecond timescale. We propose a model where the trapping sites responsible for non-radiative charge recombination can be de-activated by a photochemical reaction involving oxygen. The reaction zone is spatially limited by the excitation light-penetration depth and diffusion length of the charge carriers. The latter increases in the course of the light-curing process making the reaction zone spreading from the surface towards the interior of the crystal. The PL enhancement can be reversed by switching on/off the excitation light or switching the atmosphere between oxygen and nitrogen. Slow diffusion of the reactants and products and equilibrium between the active and "cured" trapping sites are proposed to be the reasons for peculiar responses of PL to such varied experimental conditions.

Fluorescence super-resolution microscopy showed correlated fluctuations of photoluminescence intensity and spatial localization of individual perovskite (CH3NH3PbI3) nanocrystals of size ∼200 × 30 × 30 nm(3). The photoluminescence blinking amplitude caused by a single quencher was a hundred thousand times larger than that of a typical dye molecule at the same excitation power density. The quencher is proposed to be a chemical or structural defect that traps free charges leading to nonradiative recombination. These trapping sites can be activated and deactivated by light.

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Photoluminescence (PL) of organo-metal halide perovskite semiconductors can be enhanced by several orders of magnitude by exposure to visible light. We applied PL microscopy and super-resolution optical imaging to investigate this phenomenon with spatial resolution better than 10 nm using films of CH3NH3PbI3 prepared by the equimolar solution-deposition method, resulting in crystals of different sizes. We found that PL of ∼100 nm crystals enhances much faster than that of larger, micrometer-sized ones. This crystal-size dependence of the photochemical light passivation of charge traps responsible for PL quenching allowed us to conclude that traps are present in the entire crystal volume rather than at the surface only. Because of this effect, "dark" micrometer-sized perovskite crystals can be converted into highly luminescent smaller ones just by mechanical grinding. Super-resolution optical imaging shows spatial inhomogeneity of the PL intensity within perovskite crystals and the existence of <100 nm-sized localized emitting sites. The possible origin of these sites is discussed.