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Possibilities of gallium arsenide technology in Georgia to fabricate microelectronic devices are described. Characteristics of technological processes and parameters of active and passive components for digital and analog IC's are given. A concept of technology implementation with allowance for design, epistructure growth and processing is proposed which is the basis of a foundry service for application-specific microelectronic components.

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The mathematical description of the systems consisting of a quadrature microwave sensor (MS) of homodyne configuration, antenna and target is performed based on the well-known energy relation between the signal power and the distance under free-space conditions. The original approach to the homodyne MS operation was developed for the case of RF oscillator frequency, f variations with discrete steps, Δf n . A number of important advantages of the proposed MS concept are described.