Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values * Ma Xiao-Hua(马晓华) a) , Zhang Ya-Man(张亚嫚) a) , Wang Xin-Hua(王鑫华) b) , Yuan Ting-Ting(袁婷婷) b) , Pang Lei(庞 磊) b) , Chen Wei-Wei(陈伟伟) a) , and Liu Xin-Yu(刘新宇) b) †
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