The transparent InGaZnO (IGZO) film was fabricated on the surface of PZT film by photochemical sol-gel method, hence more UV light can penetrate IGZO film reaching the IGZO/PZT junction and produce photo-induced charge carrier to obtain a high photocurrent. To decrease the crystalline temperature of PZT film, and simplify the fabrication process, the UV photochemical treatment of IGZO and PZT happened at the same time. During photochemical process, the organic agents of both IGZO and PZT gel film were decomposed greatly, forming an active metal-oxygen bond, which facilitate crystallization at a low temperature. The obtained IGZO film show a uniform surface with homogeneous particles, the obtained Pt/IGZO/PZT/LNO hetero-structure shows a good photoelectric property.