The imaging x-ray telescope (IXT) was first developed at the Institute of Precision Optical Engineering of Tongji University in 2007. Since then, we have made great progress on the development of mirror fabrication, coatings, and optic assembly. In this paper, we intend to provide an overview of the progress. Currently, we can routinely produce cylindrical mirror substrates with angular resolution of 30″ to 60″. To improve the effective area, coatings using C, Ni, and Pt layers were designed and achieved a high reflectivity at 0.5 to 10 keV. During the optic assembly, an in-situ measurement system and a three-dimensional ray-tracing program have been developed, thus guiding the assembly process in real time. Several prototypes have been fabricated, and one of them with 21 mirror layers was calibrated at the MPE PANTER x-ray test facility in Germany. The IXT prototype, with a focal length of 2052.5 mm, is characterized by a measured half-power diameter of 111″ and effective area of 39 cm 2 at 1.49 keV.

NiV/B4C multilayers with a small d-spacing are suitable for multilayer monochromator working at a photon energy region from 5 to 8 keV, or photon energy region from 10 to 100 keV. To investigate the influence of background pressure during fabrication, NiV/B4C multilayers with a d-spacing of 3.0 nm were fabricated by magnetron sputtering with different background pressures. The grazing incidence x-ray reflectivity (GIXR) and transmission electron microscopy (TEM) measurement illustrated the structural change that happened in NiV/B4C multilayers when background pressure is high. The electron dispersive x-ray spectroscopy (EDX) of NiV/B4C multilayer deposited with a high background pressure suggests a gradient distribution of oxygen, which corresponds to the gradient thickness change. The detailed x-ray absorption near edge spectroscopy (XANES) comparison of NiV/B4C multilayers, NiV coating, and B4C coating showed the chemical state change induced by background pressure. We concluded that during the deposition, vanadium oxide promoted the oxidation of boron. In order to fabricate a good performance of NiV/B4C multilayers, the background pressure needs lower than 1 × 10−4 Pa.

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