a novel configuration for a novel ultra wideband switch is presented in this paper. This switch using 0.5um GaAs process in ADS2008 simulator. Switch should be designed to trade-off insertion loss, isolation, bandwidth, and return loss. The aims of design are to provide low insertion loss along with high isolation. The design using integration inductor and resistor in parallel, and this switch exhibits high performance: over DC-10.6GHz, insertion loss is lower than-1.624dB; the ripple variation of insertion loss is less than ±0.25dB; The isolation is lower than-51.336dB; input return loss is lower than-16.402dB; on state, output return loss is lower than-15.919dB; off state, output return loss is lower than-18.294dB; on and off time are less than 4ns.

A novel configuration for a novel temperature compensated amplifier is presented in this paper. This amplifier exhibits high performance including Return Loss is well blew-12dB from DC to 6GHz, At 3.1GHz, the typical gain is 14.1dB, noise figure is 3.0dB, 1dB compression point is 13.9dBm.with insensitivity to temperature.

A 4-stage travelling wave amplifier with 10dB ± 1.2 dB gain and 12 GHz bandwidth is presented in the paper. The parameters of the small signal equivalent model about the GaAs PHEMT are extracted to evaluate the characterization of the device, which is also used to design the amplifier. The amplifier has a minimum noise figure lower than 4.8 dB in the frequency range, and the S11 and S22 are below-10 dB and-7 dB, which demonstrate a good performance. The P1dB and IIP3 are 7.3 dBm and 24 dBm, respectively, and the saturation output power is above 20 dBm at 13 GHz.