No abstract

No abstract

Two type CMOS-compatible complementary phototransistors (CPTs) with NMOS or PMOS transistor are proposed in this work for in-sensor vector-matrix multiplication (VMM). The CPT is fabricated by the 22nm FDSOI process technology and composed of a MOSFET with a p-doped well under the buried oxide (BOX). The well serves for photoelectron generation and affects the on-state current of the MOSFET by the photoelectrons. The bidirectional and tunable photoresponsivity characteristics as well as the optical-electrical signed multiplication operation (average error <2.5%) are experimentally demonstrated in the pair of CPTs. The in-sensor VMM is verified by typical artificial neural networks using the CPT array as the imageinput layer. Simulated results show slight inference accuracy losses (<1%) in LeNet3 for MNIST and VGG11/VGG16 for CIFAR-10 recognition.

No abstract