Excitation dependent two-component spontaneous emission and ultrafast amplified spontaneous emission in dislocation-free InGaN nanowires Appl. Phys. Lett. 102, 091105 (2013); 10.1063/1.4794418Thermal excitation effects of photoluminescence of annealed Ga In N As ∕ Ga As quantum-well laser structures grown by plasma-assisted molecular-beam epitaxy
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