In this work, we demonstrate that the performance of c-Si/ZnO heterojunction ultrathin-film solar cells (SCs) is enhanced by an integrated structure of c-Si trapezoidal pyramids on the top of c-Si...

An integrated functional anti-reflective surface is of great significance for optical and optoelectronic devices. Hence, its preparation has attracted great attention from many researchers. This study combined wet alkaline etching approaches and reactive ion etching (RIE) techniques to create a dual-scale hierarchical anti-reflective surface on silicon substrates. The effect of RIE time on surface morphology and optical performance was investigated using multiple characterization forms. The optimal parameters for the fabrication of dual-scale structures by the composite etching process were explored. The silicon surface with a dual-scale structure indicated excellent anti-reflective properties (minimum reflectivity of 0.9%) in the 300 to 1100 nm wavelength range. In addition, the ultra-low reflection characteristic of the surface remained prominent at incident light angles up to 60°. The simulated spectra using the finite difference time domain (FDTD) method agreed with the experimental results. Superhydrophobicity and self-cleaning were also attractive properties of the surface. The functionally integrated surface enables silicon devices to have broad application prospects in solar cells, light emitting diodes (LEDs), photoelectric detectors, and outdoor equipment.

We studied the laser-induced thermal damage on the surface of a single crystal silicon mirror illuminated by a mid-infrared intense laser. We used mid−infrared quasi-continuous wave lasers to irradiate the surface of the single−crystal silicon mirror. The power density of the irradiation process is 1 kW/cm2 to 17 kW/cm2, and the transient temperature field and thermal stress field under different laser fluxes were obtained. The simulation results show that we can calculate the thermal stress and temperature under laser irradiation. In addition, irradiance exceeding the corresponding breaking strength and melting point limit was obtained by the model. We can predict the irradiance that causes cracking and melting. There is little difference between experimental results and simulation results. On this basis, the thermal damage to the surface of the silicon wafer caused by continuous mid−infrared laser irradiation was studied.