V2CTx shows a low ion diffusion barrier, while the multiple oxidation states of vanadium allow V2CTx to participate in multi-electron redox reactions, which demonstrates a greater potential for electrochemical energy storage applications. However, the lateral arrangement of V2CTx lamellae tends to cause the accumulation and collapse of the structure. Herein, the two-dimensional layered V2CTx is modified with Ag+ and Cu2+, the V2CTx/Ag/Cu composite is successfully prepared. The Ag NPs and Cu NPs grown between the layers of V2CTx can effectively suppress the accumulation of the lamellae and ensure the smooth transfer of electrolyte ions and electrons between the layers. Meanwhile, the doping of Ag NPs and Cu NPs can enlarge the interlayer spacing of V2CTx, which can expose more active contact sites for electrolyte ions, shorten the diffusion path of electrolyte ions, and effectively improve the electrochemical performance of V2CTx. The Ag NPs and Cu NPs agglomerate in the delamination of V2CTx to form a conductive channel covering multiple layers, which facilitates cross-layer electron transfer and reduces the internal resistance of the V2CTx/Ag/Cu composite. Basis on the above reasonable structural designs, the internal resistance of the V2CTx/Ag/Cu composite is only 0.72 Ω, showing excellent diffusion ability of K+. The result represents a new step forward in exploring the electrochemical properties of two dimensional materials of V2CTx.