This study investigates the electrical performance of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors with Ga2O3 gate dielectric and applied on deep-ultraviolet phototransistors. To reduce the leakage current, we introduce the SiO2 interlayer dielectric, which effectively reduces the off-current. Under the illumination of 250 nm, the measured responsivity of the device was 3.2 A/W at an applied gate bias of 0 V. The photo-generated carriers were injected into the channel by the applied electric field and Fowler-Nordheim tunneling. A large photocurrent and responsivity can be obtained which is attributed to the high mobility of the a-IGZO channel.

This study investigates the electrical performance of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a Ta2O5 gate dielectric under monochromatic illumination. The relationship between the phototransistor performance and oxygen partial pressure is determined. The oxygen content of the a-IGZO channel significantly affects the electrical and optical characteristics of a-IGZO TFTs. At applied gate biases of 0, 0, and 0.25 V, oxygen partial pressures of 0%, 0.1%, and 0.2% yielded measured device responsivities of 0.23, 0.44, and 4.75 A/W, respectively. Oxygen content can be used to control the mobility of TFTs, which can amplify photocurrent and enhance the responsivity of a-IGZO TFTs with a Ta2O5 gate dielectric.

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In this paper, a two-dimensional (2D) reflective grating with nanodisks arrays (NDA) is described, which is capable of achieving high-efficiency and polarization-insensitive output of (−1, 0) order. The proposed grating has been optimized by the finite element method (FEM) at a central wavelength of 780 nm under Littrow mounting, where the grating achieves diffraction efficiencies of 98.01% and 97.54% at the (−1, 0) order for transverse electric (TE) and transverse magnetic (TM) polarizations, respectively. In addition, the extinction ratios of TE and TM polarizations are 33.01 dB and 35.74 dB, respectively. The electric field distribution, wavelength bandwidth, angular bandwidth and fabrication tolerance of the 2D grating are analyzed in detail. The analysis shows that the proposed grating offers a significant improvement in wavelength (bandwidth of 14 nm) and angular (bandwidth of 6.4°) bandwidths compared to previously reported 2D gratings. At the same time, the tolerance analyses demonstrate the feasibility and advantages of NDA grating in practical manufacturing processes. The results are very helpful in understanding and designing 2D gratings, and the proposed grating has great application potential in 2D grating measurement system (GMS).

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