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Long non-coding RNA metastasis associated with lung adenocarcinoma transcript 1 (MALAT1) contributes to chemotherapy resistance in some cancers, but the role of MALAT1 in sunitinib (SU) chemoresistance of carcinoma (RCC) is still unknown. In this study, MALAT1 expression in SUresistance tumor tissues and cells was tested by qRT-PCR. Then, CCK-8, Annexin V-FITC/PI, transwell, and Western blotting assays were used to evaluate cell viability and IC50, apoptosis, cell invasion, and resistance of SU-resistance RCC cells after transfected with small interfering RNA against MALAT1. Further, RNA pull-down and luciferase reporter assay were applied to investigate the underlying mechanism of MALAT1 in SU resistance. The results showed that MALAT1 expression was dramatically upregulated in SU-resistance RCC tissues and cell lines. Knockdown of MALAT1 inhibited proliferation, invasion, and SU chemoresistance, but induced apoptosis in RCC cells. The results of RNA pull-down and luciferase reporter assay indicated that MALAT1 could interact with miR-362-3p and miR-362-3p interact with RasGAP SH3-domain-Binding Protein 1 (G3BP1). Moreover, G3BP1 also played a role in SU chemoresistance of RCC cells, and MALAT1 could perform as a miR-362-3p sponge to modulate G3BP1 expression. Rescue experiments suggested that downregulation of miR-362-3p and overexpression of G3BP1 can reverse the SU chemosensitivity of MALAT1 knockdown in RCC cells. In conclusion, depletion of LncRNA MALAT1 inhibited SU chemoresistance through modulating G3BP1 via sponging miR-362-3p in RCC cells, suggesting that targeting MALAT1 may be a potential therapeutic strategy for SU-resistance RCC.

The advantages of blue InGaN light-emitting diodes (LEDs) with thicknesschirped barriers in the active region have been investigated by using the Crosslight APSYS programs. The results show that the output power of the proposed LED is increased 80% and the efficiency droop is decreased from 59% in conventional LED to 28% at the current of 250 mA. Based on the analysis of electrical and optical characteristics, these improvements are mainly attributed to the change of electrostatic field in the active region by using thickness-chirped barriers. In the even-numbered barriers, the fields are increased, which gets rid of more seriously bended valence band and results in decreased barrier heights for hole transport in the active region. Furthermore, the direction of electrostatic field in the last barrier is reversed to along the drift direction of holes, which not only can lead to upbended conduction band to rise the barrier height for electron escape but also can accelerate holes to increase the hole injection current. As a result, electrons blocking and holes injection are enhanced, and in turn, the performance of the proposed LED is improved.