Copper vanadate compounds (abbreviated to CVO) were synthesized to accelerate the sinterability of (Zn 0.7 Mg 0.3 )TiO 3 ceramics (abbreviated to ZMT). CVOdoped ZMT ceramics were prepared by a conventional mixed-oxide method. The phase structure, morphology and dielectric properties of ceramics were investigated. The results show that ZMT ceramics with 0.2 wt% CVO addition can be well sintered to approach 98 % theoretical density at 950°C. At the same time, CVO addition inhibits the exaggerated grain growth and improves morphology of ceramics samples effectively. 0.2 wt% CVO doped ZMT ceramics sintered at 950°C exhibits good microwave dielectric properties of e r = 22 and Q 9 f = 11,700 GHz. Due to their good dielectric properties, low firing characteristics, 0.2 wt% CVO doped ZMT ceramics can serve as the promising high-frequency dielectric capacitor requiring low sintering temperature.

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