This publication presents a method for deposition of ultrathin superconducting NbNx films by atomic layer deposition enhanced by plasma with metal-organic precursor and a gas mixture of H2/Ar used as reactant. The obtained films characterized by measuring of sheet resistance, ellipsometry, atomic force microscopy, and superconducting characteristics measurements. The optimal parameters of the H2/Ar gas ratio was defined at which sheet resistance of NbNx films was minimal. A comparative analysis of sheet resistance of the obtained NbNx films performed. The dependence of the transition temperature to the superconducting state on the film thickness investigated. The transition temperature of 13.7 K and the critical current density of 0.7 MA/cm2 achieved. High film uniformity, precision control of the thickness and deposition temperature of 350°C makes it possible to use these films in the manufacture of field effect transistors and in functional devices for various purposes, working on the superconductivity effect.

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