No abstract

No abstract

No abstract

The combined effects of N 2 -implantation at S/D extension and N 2 O oxide on 0.18 µm n-and p-Metal oxide field effect transistors (MOSFETs) were investigated. It is found that for n-channel transistors, V th roll-off and drain-induced barrier lowering (DIBL) are enhanced by nitrogen incorporation through either N 2 O oxide or N 2 -implantation. However, for p-channel transistors, opposite trends are observed for N 2 O oxide and N 2 -implantation. Finally, nitrogen incorporation by either method is found to improve the interface quality for nMOSFETs. While for p-channel transistors, best results are obtained by the combined effects of N 2 O oxide and N 2 -implantation.

No abstract