In this work, a theoretical study of the growth of nitride nanowires with metastable cubic (zincblende) crystal structure is presented. The formation of cubic lattice is explained by accounting the elastic strain in the nucleus of a new layer within the nanowire. The growth of GaN nanowires with cubic crystal phase on sapphire substrates is described.

In this work, the influence of elastic strain on Ga(As,P) nanowire crystal structure was studied. The stable growth of nanowire in the metastable phase is explained by accounting the elastic strain in the nucleus of newly-forming nanowire layer. Within this approach, the crystal phase switching in GaP nanowire after Ga(AsP) insertion is explained.