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In this paper, we report on measurements of angular distributions in grazing scattering of Ne and Ar ions incident along the 110 direction of the InGaP (001) surface. In our calculation, we used method of binary collision approximation. The specificity of the theoretical consideration of multiple scattering of ions by atoms on the surface of a solid, associated with the difficulty of describing the interaction of many particles, has led to the widespread use of methods for modeling the scattering process on the computer. Our calculations showed that changes in the fall of bombarding particles lead to a change in the angular distribution. The obtained results show that by the azimuthal scattering angle  on the coordinate of the aiming point we observe some groups of scattered ions: from the surface atomic chain; between the bottom and the surface atomic chain; from the semichannel; from the bottom of the semichannel and the neighboring surface atomic chain; from the neighboring surface atomic chain. Also, it has been shown the dependence of characteristic trajectories on the type and initial energy of incident ions, geometric parameters of the surface. This result is very interesting for the study of surface of semiconductor material.

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Ion scattering spectroscopy, which is a variation of low energy ion scattering (LEIS) that employs glancing scattering angles, is performed on InGaP(001) surfaces. LEIS energy distribution are simulated by computer simulation along the <110> and <ī10> direction, and the match of the positions of the flux peaks shows that the top three atomic layers are bulk-terminated. A newly observed feature are identified as a minimum in the multiple scattering when the ion beam incidence is along a low index direction. Calculated trajectories of scattered ions. This new method for analysis of large-angle LEIS data was shown to be useful for accurately investigating complex surface structures.

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