0.18 μm CMOS Power Amplifier for Ultra-Wideband (UWB) System

Maisurah, Siti; Wong, Sew Kin; Kung, F.; Hui, See Jin

doi:10.1109/wocn.2007.4284223

Cited by 6 publications

(16 citation statements)

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“…The negative side of the cascade topology is that it has high power consumption and high silicon area due to the increase in hardware components. Several previous works employ the cascaded configuration in the design and implementation of power amplifiers in order to have high gain [11], [12], [16], [17], [21], [22], [39], [45], [48], [52], [54]- [56], [59].…”

Section: Cascaded Power Amplifier Topologymentioning

confidence: 99%

“…A hybrid technique power amplifier is a combination of the three main configurations of a power amplifier: cascaded topology, cascode topology, and shunt feedback topology. As shown in Figure 6, by combining more than one topology into the design of a power amplifier, many advantages can be achieved as compared with the one topology design [13]- [15], [18], [21], [28]- [33], [36], [37], [41]- [44], [48]- [50], [51], [57], [58]. To attain extra gain, several works have employed the cascode power amplifier topology followed by common-source topology [28].…”

Section: Hybrid Technique Power Amplifiermentioning

confidence: 99%

“…In this section, a review of several published wideband power amplifiers is demonstrated [11]- [20], [21]- [30], [31]- [40], [41]- [50], [51]- [59]. A performance comparison between different schemes of power amplifier implementation is obtained in Tables 1 to 3.…”

Section: Wideband Cmos Power Amplifiersmentioning

confidence: 99%

“…There have been various works on the wideband CMOS cascaded power amplifier [11], [12], [16], [17], [21], [22], [39], [45], [48], [52], [54]- [56], [59]. A summary of the published wideband cascaded power amplifiers is presented in Table 1.…”

Section: Summary Of the Published Wideband Cascaded Power Amplifiersmentioning

confidence: 99%

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Ultra-wideband CMOS power amplifier for wireless body area network applications: a review

El-Feky

Ellaithy

Fedawy

2023

IJECE

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<span lang="EN-US">A survey on ultra-wideband complementary metal-oxide semiconductor (CMOS) power amplifiers for wireless body area network (WBAN) applications is presented in this paper. Formidable growth in the CMOS integrated circuits technology enhances the development in biomedical manufacture. WBAN is a promising mechanism that collects essential data from wearable sensors connected to the network and transmitted it wirelessly to a central patient monitoring station. The ultra-wideband (UWB) technology exploits the frequency band from 3.1 to 10.6 GHz and provides no interference to other communication systems, low power consumption, low-radiated power, and high data rate. These features permit it to be compatible with medical applications. The demand target is to have one transceiver integrated circuit (IC) for WBAN applications, consequently, UWB is utilized to decrease the hardware complexity. The power amplifier (PA) is the common electronic device that employing in the UWB transmitter to boost the input power to the desired output power and then feed it to the antenna of the transmitter. The advance in the design and implementation of ultra-wideband CMOS power amplifiers enhances the performance of the UWB-transceivers for WBAN applications. A review of recently published CMOS PA designs is reported in this paper with comparison tables listing wideband power amplifiers' performance.</span>

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Section: Cascaded Power Amplifier Topologymentioning

confidence: 99%

Section: Hybrid Technique Power Amplifiermentioning

confidence: 99%

Section: Wideband Cmos Power Amplifiersmentioning

confidence: 99%

Section: Summary Of the Published Wideband Cascaded Power Amplifiersmentioning

confidence: 99%

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Ultra-wideband CMOS power amplifier for wireless body area network applications: a review

El-Feky

Ellaithy

Fedawy

2023

IJECE

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“…The UWB PAs cover the frequency band of 3.1-4.8 GHz and 3.1-10. 6 GHz have been widely implemented in the CMOS technology [2]- [5]. The power consumptions among these fabricated UWB PAs ranged from 25 to 84 mW.…”

Section: Introductionmentioning

confidence: 99%

A 6-10-GHz CMOS Power Amplifier with an Inter-stage Wideband Impedance Transformer For UWB Transmitters

Chung

Hsu

Yang

et al. 2008

2008 38th European Microwave Conference

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-A 6-10-GHz broadband CMOS power amplifier (PA) for Ultra-wideband (UWB) transmitters is presented. An inter-stage wideband impedance transformer is designed between the small-signal stage and driver amplifier for the wideband operation. The UWB PA is implemented in the 0.18-μm 1P6M standard UMC CMOS process. Fully on-wafer measurement shows that the fabricated PA exhibits an average small-signal gain, P 1dB , and PAE of 8.5 dB, 5 dBm, and 14.4%, respectively, from 6 to 10 GHz. A low power consumption of only 18 mW is obtained from a voltage of 1.5 V.

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Design and analysis of a 2.4 GHz fully integrated 1.8V power amplifier in TSMC 180nm CMOS RF process for wireless communication

Patil¹,

Kanphade²

2015

2015 International Conference on VLSI Systems, Architecture, Technology and Applications (VLSI-SATA)

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0.18 μm CMOS Power Amplifier for Ultra-Wideband (UWB) System

Cited by 6 publications

References 0 publications

Ultra-wideband CMOS power amplifier for wireless body area network applications: a review

Ultra-wideband CMOS power amplifier for wireless body area network applications: a review

A 6-10-GHz CMOS Power Amplifier with an Inter-stage Wideband Impedance Transformer For UWB Transmitters

Design and analysis of a 2.4 GHz fully integrated 1.8V power amplifier in TSMC 180nm CMOS RF process for wireless communication

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