Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials 2020
DOI: 10.7567/ssdm.2020.d-1-01
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1.2 A/mm Drain Current Density and 1.1 Ω mm Lowest Contact Resistance for 2DHG Diamond MOSFETs Using High Concentration Selective Regrowth B-doped Diamond

Yukiko Suzuki1,
Shoichiro Imanishi2,
Ken Kudara3
et al.
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