10 Gbit/s low chirp performance of strained layer multiquantum well DFB laser

Hirayama, Y.; Morinaga, M.; Tanimura, Makoto; Onomura, Masaaki; Funemizu, M.; Kushibe, Mitsuhiro; Suzuki, N.; Nakamura, Masaru

doi:10.1049/el:19910156

Cited by 19 publications

(3 citation statements)

References 4 publications

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“…Strained-layer QW lasers exhibit lower values of α eff compared with their unstrained counterparts [79,81,86,87]. For example, in an unstrained MQW DFB laser, α eff was estimated to be 3.1 at 1.55 µm wavelength, while a similar laser structure with 1.9% compressive strain had a value as low as 1.1 [86].…”

Section: Spectral Control Under High-speed Modulationmentioning

confidence: 99%

Fast phenomena in semiconductor lasers

2000

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Although diode lasers are almost ideal sources for ultrahigh-speed data communication systems, system performance remains critically dependent on the quality of the optical pulses that they generate. Uniquely among lasers, the output power can be modulated directly by modulating the diode current. However, this leads to relaxation oscillations and a roll-off at high frequencies that is superimposed on the frequency response of the drive circuit. This is limited by parasitics and maximum modulation frequencies range from 1 to 70 GHz, depending on the type of laser and its packaging. The higher values are obtained with short cavity lengths and tight optical confinement, the highest frequencies being achieved in vertical-cavity devices. Modulation bandwidth is usually limited by circuit parasitics, device heating and the maximum power-handling capability of the laser facets.The generation of picosecond and femtosecond pulses demands special techniques and three-gain switching, Q-switching and mode locking-are discussed in detail, with their relative advantages and disadvantages compared. Very short pulses inherently contain a significant spread of wavelengths and their generation requires the optical gain in the laser medium to extend across that wavelength range. While diode lasers satisfy this criterion better than many other types, the effect of gain non-linearities and carrier-transport effects prevent the Fourier-transform limit from being achieved in practice. As a result, external pulse-compression techniques, which exploit the detailed temporal and spectral properties of the laser pulses, such as frequency chirping, self-phase modulation and group velocity dispersion, are becoming more important, and diode lasers are increasingly challenged as primary sources by compact, efficient, diode-pumped solid-state lasers.The paper summarizes the levels of maximum pulse power and minimum duration that have been achieved using the various techniques.

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Section: Spectral Control Under High-speed Modulationmentioning

confidence: 99%

Fast phenomena in semiconductor lasers

2000

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“…The K-factor is estimated fron the relationship between the dampins rate I and the resonance frequency fr as follows; f =K.fr2 + l/ta (4) where t a is carrier lifetime. Damping rate f for three types of SL-MQW SA-CIII lasers is shown as a function of the square of fr in Fig.4.…”

Section: I{onlinear Dauping K-factormentioning

confidence: 99%

Extremely Low Damping K-Factor in Highly Detuned DFB Strained Layer MQW SA-CM Lasers

Onomura¹,

Hirayama²,

Morinaga³

et al. 1991

Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials

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“…Recently, there have been numerous reports of low chirp operation in DFB lasers using strained MQW active layers [1], [2] which have been theoretically predicted to have higher bandwidth than bulk active or latticematched MQW lasers because of enhanced differential gain [3]. In addition, drastic improvement of modulation bandwidth was achieved by using p-type modulation-doped MQW lasers [41,151.…”

Section: Introductionmentioning

confidence: 99%

<title>Dynamic characteristics of 1.55-um strained MQW-DFB lasers: improvement of high-speed performance by gain-coupling effects</title>

Lu¹,

Makino²,

Li³

et al. 1994

SPIE Proceedings

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We have fabricated 1 .55 im ridge waveguide DFB lasers consisting of p-doped, 1.5% compressive strained-layer all quaternary MQW active region by two-step MOCVD with a first-order grating located in the upper GRINSCH region. By optimizing the p-doped carrier concentration in the barrier layers, ii and detuning, the measured -3 dB bandwidth was 13 GHz with flat frequency response and very little RC roll-off in this structure.From RIN measurements, the intrinsic bandwidth was calculated to be 18 GHz.Furthermore, by changing the position of the grating to the MQW active region, partly gain-coupled DFB lasers were formed; these devices exhibit very stable single mode operation and narrow spectral linewidths. The -3 dB electrical bandwidth was measured around 22 GHz and the intrinsic bandwidth was estimated to be 28-30 GHz. Experimental results show that the devices have small wavelength chirps and clear eye patterns under 10 Gbit/s NRZ direct modulation.

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10 Gbit/s low chirp performance of strained layer multiquantum well DFB laser

Cited by 19 publications

References 4 publications

Fast phenomena in semiconductor lasers

Fast phenomena in semiconductor lasers

Extremely Low Damping K-Factor in Highly Detuned DFB Strained Layer MQW SA-CM Lasers

<title>Dynamic characteristics of 1.55-um strained MQW-DFB lasers: improvement of high-speed performance by gain-coupling effects</title>

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