1989
DOI: 10.1109/68.36012
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100 kW DC biased, all semiconductor switch using Si P-I-N diodes and AlGaAs 2-D laser arrays

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Cited by 19 publications
(2 citation statements)
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“…While PCSS devices have seen significant research across different material bases, optical bipolar PSDs have shown promise for power-electronic applications [75]. This encompasses light-triggered thyristor (LTT) [76]. One of the key advantages of the LTT is the high electrical gain of the thyristor that significantly reduces the requirement for optical power, which has economy of scale implications for WBG optical thyristors [77] However, the high gain of the LTT comes at the price of slow turn of time since the thyristor is a latched device.…”
Section: Optical Bipolar Psdsmentioning
confidence: 99%
“…While PCSS devices have seen significant research across different material bases, optical bipolar PSDs have shown promise for power-electronic applications [75]. This encompasses light-triggered thyristor (LTT) [76]. One of the key advantages of the LTT is the high electrical gain of the thyristor that significantly reduces the requirement for optical power, which has economy of scale implications for WBG optical thyristors [77] However, the high gain of the LTT comes at the price of slow turn of time since the thyristor is a latched device.…”
Section: Optical Bipolar Psdsmentioning
confidence: 99%
“…With regard to other optically-activated lateral and vertical p-i-n diodes, a few have been reported in [24], [25]. Most of these devices are targeted for low-frequency but high-power applications (e.g., pulsed-power switching or microwave power generation).…”
Section: Past Workmentioning
confidence: 99%